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We have demonstrated the fabrication of InGaAs ring-like nanostructures by dropletepitaxy technique using molecular-beam epitaxy. Dependence on the substrate temperature and the amount of indium and gallium of the nanostructural properties was investigated. It was found that increasing substrate temperature resulted in larger InGaAs ring size but with lower density and that increasing In0.5Ga0.5 amount resulted in larger InGaAs ring size but with oscillating density. Photoluminescence results confirmed the high quality of the nanocrystal.

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In this contribution, we have demonstrated the fabrication of tensile strained GaP nanostructures on GaAs (100) substrates by droplet epitaxy using molecular beam epitaxy. The GaP nanostructures are ring‐like structure due to crystallization with low P2 pressure. The density of GaP ring‐like nanostructures varies between 8.92×108‐2.17×109 cm‐2 and the average of diameter varies between 88.4‐133 nm with increasing the Ga amount deposition in the range of 2.4‐4.8 ML. The photoluminescence result shows the tensile strain‐modified band gap effect of GaP nanostructure in GaAs matrix and it also confirms the high‐quality of GaP nanocrystal (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)