Articles you may be interested inStudy of the resonant frequencies of silicon microcantilevers coated with vanadium dioxide films during the insulator-to-metal transition J. Appl. Phys. 107, 053528 (2010); 10.1063/1.3309749 Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters

Articles you may be interested inHigh-sensitivity and wide-directivity ultrasound detection using high Q polymer microring resonators Appl. Phys. Lett. 98, 204103 (2011); 10.1063/1.3589971 Resonance-mode effect on microcantilever mass-sensing performance in air Rev. Sci. Instrum. 79, 074301 (2008); 10.1063/1.2949390 Mass detection using capacitive resonant silicon resonator employing L C resonant circuit technique Rev. Sci. Instrum. 78, 085103 (2007);

We report a study on the plasma-enhanced chemical vapor deposition of silicon carbonitride, as well as the resonant behavior of nanomachined SiCN structures. Films with thicknesses of 1 um, and 200 nm were deposited at varying gas ratios using ammonia (NH3), nitrogen (N2), and diethylsilane (DES) as precursors. X-ray photoelectron spectroscopy revealed high nitrogen and low carbon content in films deposited at high NH3:DES gas flow ratios. Selected samples annealed at varying temperatures experienced shifts in stress towards tensile of Δσ = 235 MPa, 432 MPa, 724 MPa, and 1140 MPa, at annealing temperatures of T = 400 °C, 500 °C, 600 °C, and 700 °C respectively. Infrared spectroscopy reported a loss of incorporated hydrogen as a mechanism of stress modulation. Resonant assaying of cantilevers fabricated from 200 nm-thick SiCN yielded root-modulus-over-density values of √(E/ρ) = 6.95 × 103 m/s and √(E/ρ) = 8.35 × 103 m/s, comparable to those of silicon.