A memristor is a new electronic device with small volumes and small fluctuations. As a two-terminal device, it is mainly characterized by non-volatility and nanoscale characteristic size. Memristors can also calculate and store at the same time, which has a broad application prospect in logic circuits. Traditional integrated circuit technology has been very mature. And CMOS technology has almost reached the limit of physical size. Compared with traditional circuit components, memristor devices are compatible with CMOS circuits with their fast computing speed, low power consumption, and small layout area. A three-state output module based on a threshold memristor is proposed. The structure includes an inverter, a PMOS tube, two NMOS tubes, and two threshold memristors. Compared with the traditional three-state gate which only uses CMOS technology, the circuit area required by the module is smaller and the overall power consumption is lower, which caters to the development trend of portable and low-power electronic devices. Then the digital switch circuit using this module is introduced, which provides a new idea for the data transmission circuit. The circuit and module are simulated and verified by LTspice software.

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Memristor is a new type of electronic component with small size and non-volatile, and it is the most promising new electronic component to replace MOS tube. The computing and storage parts of the computing electronic machines we use today are separate. With the development of technology and new materials, the indicators of CPU and memory have undergone qualitative changes, but the data transmission of CPU and memory still needs to rely on the bus, which greatly reduces the performance of computing and storage. This paper studies the integration of storage and computing. The ultimate purpose of this experiment is to integrate computing and storage into one chip. This paper proposes a 1T2M memory-computing integrated circuit design based on threshold-type memristors. This circuit is a new circuit structure. This circuit consists of an NMOS transistor and two threshold-type memristors. This structure can realize “OR logic operation” and “storage”. The circuit structure is simple, the performance is better, the number of transistors is less, the integration level is higher, and the reading and writing speed is faster. The simulation verification is carried out by LTSpice.