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Barium zirconate (BaZrO 3 ) was synthesized successfully by the sonochemical method. The monophase of BaZrO 3 was formed completely in short irradiation time without the calcination process. X-ray diffraction, Fourier transform and Raman spectroscopy were used to characterize formation of the perovskite BaZrO 3 phase, which occurs in a 60 minute single phase with a cubic crystal structure at room temperature. Therefore, sonochemical irradiation could accelerate the formation of BaZrO 3 particles significantly. Furthermore, scanning electron microscopy investigated the uniform shape and size. The size distribution became narrow with increasing time, as a function of irradiation.

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This article describes the extraction of total series resistance, effective channel length and low field effective channel mobility degradation parameter at temperature in the range of 25"C-125 "C of NMOS device .The relation of Ins and VGS in a linear region was used with a different of channel length. The procedure is based on the measurement of the transconductance characteristics of MOSFET in the linear region. The transconductance characteristics is determine for the several devices of difference drawn channel length. The results shows that, the effective channel length is increased in a range of 5xlO-1o m/°C. The low field mobility degradation parameter is decreased by the factor of 0.733. The total series resistance is increased in the range of 1.4 Q-Ilm/"C. The errors between the predicted model and measured of Ins& VGS in linear region is approximately 3 %

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