RF MEMS technology can offer enhanced performance and have potential prerogatives over the conventional solid-state devices. RF MEMS Switches can be used because of their extensive electrical characterization in order to the dynamic response in low voltage. This paper presented an implemented design of a RF MEMS switch using ANSYS. After comparing Silicon, Gold and Aluminium material model, this paper also report the best RF MEMS switch model to achieve low voltage, switching frequency and low insertion loss. With applying same voltage on all models, this paper showed the Gold material model gives the most suitable result.