The charge release speed and backward phase switching time of lanthanum-doped lead zirconate titanate stannate antiferroelectric thin films were investigated by directly measuring the switching current upon removal of the applied electric field. The backward switching time is about 6 ns. The maximum switching current density can reach 9400 A/cm2, and more than half of the stored charge can be released in 10 ns. These results show that the obtained antiferroelectric thin films are very promising for decoupling capacitor applications in high speed multichip modules.

No abstract

No abstract

No abstract

No abstract