In this work, we design and simulate a new class AB second generation current conveyor (CCII) employing 32 nm technology node carbon nanotube field effect transistors (CNTFET). The performance of the proposed CNTFET based class AB CCII (CNTFET-CCII) has been optimized by altering the number of carbon nanotubes (CNTs) (N), CNT pitch (S), and CNT diameter (D CNT). The proposed CCII has been compared with the conventional CMOS-based class AB CCII (CMOS-CCII). The simulation study has revealed that in the proposed CCII, the voltage and current bandwidth (BW) have enhanced by two orders, terminal X resistance

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This paper presents five feature-enriched hardware-

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