We present a systematic theoretical study on mono and digallium selenide clusters, Ga(m)Se(n) (m = 1, 2 and n  =  1-4), along with their negatively and positively charged counterparts. Different theoretical methods, namely density functional theory (DFT), second-order Møller-Plesset perturbation theory (MP2) and coupled cluster singles and doubles, including non-iterative triples [CCSD(T)], were employed in conjunction with the 6-311+G(2df) basis set. The lowest-energy configurations of gallium selenides prefer to be planar, with the exception of cationic GaSe4 and Ga2Se4. The adiabatic electron affinities (AEA) of Ga(m)Se(n) (m = 1, 2 and n  = 1-4) clusters range from 1.07 to 3.78 eV, and their adiabatic ionization potentials (AIP) vary from 7.57 to 8.76 eV using the CCSD(T)//B3LYP level of theory. It was found that the AEAs of gallium selenides do not depend solely on the electrophilicity of the clusters but also on their electronic structures. No significant trend was observed in the AIP values and HOMO-LUMO (H-L) gaps with increase in cluster size of the mono and digallium selenide series. Among the dissociation channels, the decomposition of GaSe4 → GaSe2 + Se2 was found to be thermodynamically most favored. Furthermore, the AEAs of GaSe2, GaSe3, GaSe4 and Ga2Se4 were found to exceed that of the chlorine atom and are therefore termed as 'superhalogens'. Finally, the AEAs of the Ga2X(n) (X = O-Se; n = 2-4) series were found to be almost similar.

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A systematic investigation on the neutral and anionic digallium tetraoxide, Ga(2)O(4) has been carried out by using density functional theory (DFT), second-order Møller-Plesset perturbation theory (MP2), and the coupled cluster approach with single and double substitutions and a perturbative treatment of the triple excitations [CCSD(T)]. The geometry of neutral Ga(2)O(4) has been proposed earlier, from an experimental study, to adopt a D(2d) symmetry (J. Phys. Chem. 1979, 83, 656). However, the current research reveals that, out of the several isomers considered for neutral and anionic digallium tetraoxide, the (3)B(1u) and (2)B(3g) of the planar D(2h) geometry (7a-D(2h)) are the lowest-energy states for Ga(2)O(4) and Ga(2)O(4)(-). Our computations rule out the D(2d) geometry (3-D(2d)) as a viable contender for neutral Ga(2)O(4). The (3)B(2) (3-D(2d)) state is located above the (3)B(1u) (7-D(2h)) state by at least 4.26 eV. The energies of the low lying states, geometrical parameters, and energetic features (VEDE, AEDE, and AEA) are reported. The AEA of Ga(2)O(4) is calculated to be 3.94 eV (B3LYP), 3.24 eV (MP2), 3.42 eV [CCSD(T)//B3LYP], and 3.38 eV [CCSD(T)//MP2], respectively. In addition, the dissociation energy, D(e), for the process Ga(2)O(4) ((3)B(1u)) → 2GaO(2) ((2)A(2)) is 3.59 eV (B3LYP), 5.08 eV (MP2), 4.82 eV [CCSD(T)//B3LYP], and 4.80 eV [CCSD(T)//MP2]. The results obtained in this work are critically analyzed, discussed, and compared with those of the analogous metal oxides.

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