No abstract

A Full Band Monte Carlo simulator has been developed to consider phonon transmission across interfaces disposed perpendicularly to the heat flux. This solver of the Boltzmann transport equation does not require any assumption on the shape the phonon distribution and can naturally consider all phonon transport regimes from the diffusive to the fully ballistic regime. This simulator is used to study single and double Si/Ge heterostructures from the micrometer scale down to the nanometer scale, i.e. in all phonon transport regime from fully diffusive to ballistic. A methodology to determine the thermal conductivity at thermal interfaces is presented.