This study investigates how technology acceptance model (TAM) factors and social factors determine customer purchase intention. Although previous studies on mobile apps have investigated TAM, critical social factors have been neglected, thus, reinforcing the need to study the latter's contribution to consumer purchase intention. Accordingly, this study examines social influence and peer influence in the TAM and collects 777 questionnaires from Digikala app users. Data were then analysed using structural equation modelling by AMOS. The findings indicate that perceived usefulness does not have a significant effect on attitude towards mobile app use. However, perceived ease of use, social and peer influence, and intention to purchase were shown to exhibit positive effects on attitude in this regard. The results also demonstrate that attitude towards mobile app use is a full mediator on three paths of the model. Finally, moderation analysis showed that only age has a mediating effect on the path from perceived usefulness to attitude towards mobile app use.

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Whilst counterfeiting is regarded as one of the 'oldest crimes in history', contextualised treatments of Middle East and North Africa (MENA region) are rare despite growing interconnections with the global economy. Accordingly, this paper explores consumer motivations to purchase counterfeit products and identifies possible counter-influences. Data from a survey of 400 respondents drawn from Morocco was tested with logistic regression models to determine the significant factors that trigger responsiveness and deterrence to counterfeit products. The tests were based on three product categories: clothing, cosmetics and mobile phones. Additionally, consumer demographics and selected social triggers were evaluated to build a profile of consumers typically likely to consider buying (or avoiding) counterfeit goods. Results show that concerns related to health, disappointment risk and integrity are the most significant countervailing factors on behavioural intentions towards purchasing counterfeits. On a socio-demographic level, it was found that low-income consumers are more positively disposed to buying counterfeits. Gender also seems to have an explanatory force. Women with higher educational backgrounds are less likely than men to consider buying counterfeit goods. For all the products evaluated, quality and price consistently proved the most important factors driving the intention to buy counterfeits. The implications are highlighted; combating counterfeiting is not an exclusive preserve of any single entity (governments, business or para-governmental agencies) but a shared responsibility. There is a lot at stake for consumers, manufacturers and the industrial nations if the menace is not effectively checked.

Temperature-dependent measurements of the photoluminescence ͑PL͒ intensity, PL lifetime, and infrared photocurrent, were performed on an erbium-implanted silicon p -n junction in order to investigate the energy transfer processes between the silicon electronic system and the Er 4 f energy levels. The device features excellent light trapping properties due to a textured front surface and a highly reflective rear surface. The PL intensity and PL lifetime measurements show weak temperature quenching of the erbium intra-4 f transition at 1.535 m for temperatures up to 150 K, attributed to Auger energy transfer to free carriers. For higher temperatures, much stronger quenching is observed, which is attributed to an energy backtransfer process, in which Er deexcites by generation of a bound exciton at an Er-related trap. Dissociation of this exciton leads to the generation of electron-hole pairs that can be collected as a photocurrent. In addition, nonradiative recombination takes place at the trap. It is shown for the first time that all temperature-dependent data for PL intensity, PL lifetime, and photocurrent can be described using a single model. By fitting all temperature-dependent data simultaneously, we are able to extract the numerical values of the parameters that determine the ͑temperature-dependent͒ energy transfer rates in erbium-doped silicon. While the external quantum efficiency of the photocurrent generation process is small (1.8ϫ10 Ϫ6 ) due to the small erbium absorption cross section and the low erbium concentration, the conversion of Er excitations into free e -h pairs occurs with an efficiency of 70% at room temperature.