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A unique class of electronic-vibronie photoluminescence spectra in silicon is observed exclusively after noble-gas ion implantation and partial annealing. Characteristic features are mass-dependent systematic line shifts, systematic behavior in the defect formation and annealing, and the common trigonal defect symmetry. The spectra are closely related with the previously studied I\ (1.018-eV) spectrum emitted by an intrinsic lattice defect. It is concluded that the noble gases are incorporated into the intrinsic defect in an analogous way, constituting a class of related deep optical defects.