Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector J. Appl. Phys. 94, 5283 (2003); 10.1063/1.1609634 Initial growth step and annealing effect of Ta 2 O 5 formed by anodization of Ta foil in an ammonium tartrate electrolyte J.

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We present a comprehensive review on prospects for one-, two-, or three-dimensional nanostructure-based solar cells for manufacturing the future generation of photovoltaic (PV) modules. Reducing heat dissipation and utilizing the unabsorbed part of the solar spectrum are the key driving forces for the development of nanostructure-based solar cells. Unrealistic assumptions involved in theoretical work and the tendency of stretching observed experimental results are the primary reasons why quantum phenomena-based nanostructures solar cells are unlikely to play a significant role in the manufacturing of future generations of PV modules. Similar to the invention of phase shift masks (to beat the conventional diffraction limit of optical lithography) clever design concepts need to be invented to take advantage of quantum-based nanostructures. Silicon-based PV manufacturing will continue to provide sustained growth of the PV industry.

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