This paper presents a V-band Low Noise Amplifier (LNA) that uses a cascode configuration. This LNA will be used as a part of a WPAN (Wirless Personal Area Network) receiver in the millimeter-wave band at 60 GHz. This low noise amplifier is designed according to the MMIC technology (Monolithic Microwave Integrated Circuit) in PH15 process from UMS foundry and uses a 0.15 μm GaAs PHEMT (Pseudomorphic High Electron Mobility Transistor). The particularity of this LNA compared to other LNAs in literature is its very low noise figure which is equal to 1dB and its high gain which is about 23 dB. An input return loss of -6.61 dB and an output return loss of -11.26 dB are also achieved by this LNA.

In this paper, a three-stage cascode LNA and a three stage common source LNA are presented. A comparison in terms of noise figure and gain between the two designed three-stage MMIC common source and cascode LNAs is discussed. This LNAs will be used as a part of a WP AN (Wirless Personal Area Network) receiver in the millimeter-wave band at 60 GHz. These low noise amplifiers are designed according to the MMIC technology (Monolithic Microwave Integrated Circuit) in PHIS process from UMS foundry and uses a 0.15 !lm GaAs PHEMT (Pseudomorphic High Electron Mobility Transistor).The three-stage cascode LNA shows better performances compared to the three-stage common source LNA.The proposed three-stage cascode LNA exhibits a very low noise figure which is equal to IdB and a high gain which is about 23 dB.An input return loss of -6.61 dB and an output return loss of -11.26 dB are also achieved by this LNA.