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Ferroelectric Pb(Zr,Ti)O3 (PZT) thin films were deposited on trenched SiO2/Si substrates at various substrate temperatures by liquid delivery metalorganic chemical vapor deposition (MOCVD) using Pb(DPM)2, Zr(DIBM)4 and Ti(OiPr)2(DPM)2 as precursors. Their step coverage increased from 38 to 80%, while their deposition rate decreased with decreasing the substrate temperature from 600 to 400°C. In the deposition on planar Pt/Ti/SiO2/Si substrates, the as-grown PZT films deposited under the substrate temperature of 450°C were confirmed to be amorphous; they crystallized into perovskite PZT single phase and showed ferroelectric properties after post annealing at 600°C in air for 15 min. From these results, we concluded that the combination of low-temperature deposition and post annealing is effective in improving the step coverage of PZT thin films deposited by liquid delivery MOCVD although composition control is severe in such a case because the self-regulation of lead atoms is not realized at low temperatures.

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Ferroelectric PZT thin films were deposited by liquid delivery MOCVD using a cocktail solution. The cocktail solution consisted of Pb(METHD) 2 , Zr(METHD) 4 and Ti(MPD)(METHD) 2 diluted with ethylcyclohexane. The films deposited on Pt/Ti/SiO 2 /Si at a substrate temperature of 500 • C consisted of PZT, PbO and PbPt x , and showed poor properties. However, after annealing at 450 • C in air for thirty minutes, the PbPt x phase disappeared while the volume of the PbO phase increased. The hysteresis properties were also improved by annealing at 450 • C. After annealing at 600 • C in air for thirty minutes, the PbPt x and the PbO phases disappeared perfectly and the PZT thin films showed good hysteresis properties with the remanent polarization of 30 µC/cm 2 and the coercive field of 88 kV/cm.

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