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Barium titanate (BTO) samples were prepared by nanomilling based solid state reaction method. Dielectric behavior of BTO sample has been investigated by temperature dependent impedance spectroscopy. The impedance analysis of BTO samples confirm that hopping of electrons and defects coexisted in sample and contribution of grain and grain boundary to dielectric behavior is discussed. A single semicircular arc obtained by Nyquist plots whose radius decreased with increase in temperature illustrates the prominent role of grains. The activation energy of defects was calculated from Arrhenius plot. These defects may be due to oxygen vacancies and hopping between Ti+4 to Ti+3 ions.