Гідротермальний синтез нанодисперсного діоксиду титану (огляд)1 ДЗ "Південноукраїнський національний педагогічний університет імені К.Д. Ушинського", вул. Старопортофранківська, 26, м. Одеса, 65020, Україна,

An electrostatic-deformation model of atomic hydrogen passivation of electrically active centers of the type of compression defects in Cd1 -xZnxTe semiconductors is proposed. It is found that the effect of increasing passivation of electrically active centers in Cd1 -xZnxTe occurs when the concentration of atomic hydrogen NH does not exceed the concentration of acceptors NA (NH  NA), and weakening of the passivation effect is observed when the concentration of atomic hydrogen NH is much higher than the concentration of acceptors NA (NH  NA). The expression for the resolution Ri of optical-registering metal-dielectricsemiconductor nanostructures Cd1 -xZnxTe (0  x  1) is obtained and the resolution value for nonpassivated as well as for passivated in the hydrogen atmosphere semiconductor material Cd0.8Zn0.2Te is calculated, which is R1  6682 and R2  17423, respectively. A method for expanding the spectral range of optical information recording based on n-p-i-m nanostructures by changing the composition (0  x  1) of the solid solution Cd1 -xZnxTe is proposed.