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The design, fabrication and characterization of electrooptical modulators and switches based on pseudomorphic InGaAs/GaAs multipie-quantum-well (MQW) structures is presented. The absorption and refractive index changes (Delta alpha, Delta n) of Insub0.2Gasub0.8As/ GaAs MQW structures due to the quantum-confined Stark effect are examined in detail. The figures of merit Delta alpha/alpha 0 and Delta n/alpha 0 give information on the design of modulation and switching devices. Based on these results, we develop two types of efficient and high-speed modulators, vertical and waveguide modulators, and for the first time an InGaAs/GaAs intersectional X-type switch. Recent experimental results for each device are presented

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We report about measurements of optical bistability in hybrid AlAs/GaAs Bragg reflectors. We have estimated an optical switching energy of 0.1 fJpm2, a switching intensity of about 1 Wcm2 and an electrooptical modulation of 40 % using a voltage swing of 60 V.