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Articles you may be interested inGrowth of single crystalline GaN thin films on Si(111) substrates by high vacuum metalorganic chemical vapor deposition using a single molecular precursor Effect of dislocations on luminescence properties of silicon-doped GaN grown by metalorganic chemical vapor deposition method Growth of cubic SiC thin films on Si(001) by high vacuum chemical vapor deposition using 1,3-disilabutane and an investigation of the effect of deposition pressure Epitaxial growth of cubic SiC thin films on silicon using single molecular precursors by metalorganic chemical vapor deposition Silicon carbide ͑SiC͒ thin films were prepared on Si͑100͒ substrates by high vacuum metalorganic chemical vapor deposition using a single-source precursor at various growth temperatures in the range of 700-1000°C. The precursor is diethylmethylsilane, and is used without carrier gas. The effects of substrate temperature as well as deposition time on the crystal growth were investigated. The optimum temperature for the formation of high quality polycrystalline SiC thin films was found to be 900°C on the basis of x-ray diffraction and transmission electron diffraction results. X-ray photoemission spectroscopy shows that SiC films grown at 900°C have slightly carbon-rich compositions ͑Si:Cϭ1:1.2͒ in the surface region, but stoichiometric composition in the bulk. Scanning and transmission electron microscope images show the influence of substrate temperature on the grain size and crystallinity of the films. Large grain sizes and high quality crystallinity can be obtained below 900°C.

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