Correction for ‘Composition control of conformal crystalline GeSbTe films by atomic layer deposition supercycles and tellurization annealing’ by Yewon Kim et al., J. Mater. Chem. C, 2022, 10, 9691–9698, DOI: https://doi.org/10.1039/D2TC00784C.
To realize three-dimensional vertical phase-change random-access memory (PCRAM) devices, it is essential to fabricate highly conformal GeSbTe (GST) films inside high-aspect-ratio holes using atomic layer deposition (ALD). Different compositions of...
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