We demonstrate a GaAs-based superluminescent diode (SLD) based on the incorporation of a window-like back facet into a self-aligned stripe structure in order to reduce the effective facet reflectivity. This allows the realisation of SLDs with low spectral modulation depth (SMD) at high power spectral density (PSD), without the application of anti-reflection coatings to either facet. This approach is therefore compatible with ultra-broadband gain active elements. We show that 30 mW output power can be attained in a narrow bandwidth, corresponding to 2.2 mW nm −1 PSD with only 5% SMD, centred about 990 nm. We discuss the design criteria for high power and low SMD and the deviation from a linear dependence of SMD on output power, resulting from Joule heating in the self-aligned stripe.

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