The magnetic and electrical properties of crystalline Mn0.05Si0.95 films prepared by post-thermal treatment of the as-deposited amorphous Si-Mn (95at.%−5at.%) have been investigated. Both the temperature dependence and field dependence of magnetization were measured using superconducting quantum interference devices, and it has been indicated that the film materials are ferromagnetic with Curie temperature over 400K. X-ray diffraction analysis revealed full crystallization of the films and the incorporation of Mn into the host crystalline Si lattice. Behavior of thermally activated conduction processes of the films has been evinced by electrical property measurement for the films.

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