A novel approach to the preparation of thin films by using RF diode sputtering was developed. In one deposition run, thin films of doped ZnO:(Al, Ga) were obtained with different structural, optical and electrical properties. ZnO:Al films of low resistivities in order of 10 −3 Ωcm and high optical transmittances about 93 % have appeared the most suitable for photovoltaic applications.
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