Near-infrared photodetectors have been fabricated using standard CMOS processes in conjunction with the multilayer growth of Si/SiGe 0.06 using low-pressure chemical vapor deposition (LPCVD). Cross-section scanning electron microscopy (SEM) indicates the existence of quantum dot like corrugations in devices with particularly thick SiGe 0.06 quantum wells. With an accumulation of germanium atoms at the crest of such features and commensurate high germanium concentration we see a considerable enhancement of the long wavelength detection sensitivity of photodetectors in the range 1100-1300 nm. By fitting experimental data the minimum energy gap of the structure is found to be 0.88 eV corresponding to a germanium concentration of around 15%.