Measurements have been made of the optical absorption induced in diamond by irradiation with electrons of energy in the range 0.3 to 2.0 MeV. Rate curves have been determined for various features in the absorption spectrum.Electron irradiation of semiconducting diamond causes a decrease in the resistivity, most of which arises from a decrease in the carrier concentration. The shape of the rate curve of carrier concentration as a function of dose can be satisfactorily explained in terms of radiation-induced donor levels. The variation with electron energy of the rate of introduction of the donor levels has also been determined.Both optical and electrical rate curves are compared with calculated curves for the displacement of atoms, assuming various values of the displacement energy. Up to 1.0 MeV, the optical results have similar shape to the curve calculated for Ed = 80 eV and the calculated number of defects deduced is in reasonable agreement with the concentration of donor levels from the electrical measurements.
Earlier work based on specular reflectance measurements on single crystals of the cyclic polynitramine known as RDX indicated the presence of an absorption band near 340 nm. Since a similar band was not observed in dilute solution, the absorption was attributed to the formation of a charge-transfer self-complex in the crystalline state. This work compares measurements of the transmittance of thin single crystals and new specular reflectance measurements to absorption spectra of saturated solutions of the polynitramines known as RDX and HMX. The results are found to support the charge-transfer self-complex hypothesis.
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