Experiment 865 at the Brookhaven AGS has observed the decay K + → e + νeµ + µ − . The branching ratio extracted is (1.72±0.37(stat)±0.17(syst)±0.19(model))×10 −8 where the third term in the error results from the use of a model to extrapolate into a kinematic region dominated by background.
The purpose of this paper Is to describe a novel charge transport scheme In semiconductors In which the field responsible for the charge transport Is Independent of the depletion field. The application of the novel charge transport scheme leads to the following new semiconductor detectors: 1) Semiconductor Drift Chamber 11) Ultra low capacitance-large area semiconductor x-ray spectrometers and photodiodes. iii) Fully Depleted Thick CCD Special attention is paid to the concept of the Semiconductor Drift Chamber as a position sensing detector for high energy charged particles. Position resolution limiting factors are considered, and the values of the resolutions are given,
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