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In this paper, we present a study on signal isolation approaches for mixed-signal circuits, via both simple test structures and actual circuits. Analysis was focused on commonly used substrates such as p+, p-and buried p+ substrate. Results show that the selection of substrate, isolation structures and layout rules have significant impact on the substrate noise isolation.

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A comprehensive study on the effect of extrinsic base optimization on the RF performance of an advanced SiGe HBT is presented. An optimized extrinsic poly base with its interface to the epi-base passivated by boron ions is demonstrated to enhance the f max and the current gain almost two times and to reduce the low-frequency 1/f noise ten times and noise figure (NF) 0.5 dB, achieving f max of 45 GHz, 1/f noise corner frequency of 700 Hz at I B = 1:0 A, NF 1:0 dB at 900 MHz. Early voltage V A of 200 V is achieved, while maintaining a BV CEO of 8.0 V.