Low noise design: better than 600eV (Ge) at C s =0pF Fast rise time: better than 20ns at C s =0-30pF Count rate capability>200000counts/s ( 60 Co) Count rate overrange indicator Detector bias filter rated to ±5000Vdc Separetaly terminated energy and timing outputs Diode protected FET Input 43 Πίνακας 2.7: Συγκρότηση και ρυθµίσεις των ανιχνευτικών διατάξεων γερµανίου του ΕΠΤ-ΕΜΠ Εξοπλισµός GeLi Ge LEGe XtRa Μονάδα ΝΙΜ ΒΙΝ
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