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La 0.67 Sr 0.33 MnO 3 /BaTiO 3 (LSMO/BTO) bilayer films were epitaxially grown on Nb:SrTiO 3 (NSTO) substrates by the pulsed laser deposition technique. Current-voltage (I-V) characteristics of the LSMO/BTO bilayer films were studied. I-V curves were measured at room temperature, which show rectifying behaviour and can be well fitted by the space-charge-limited current mechanism under forward bias while thermionic emission model under reverse bias. Analysis indicates that a modulating Schottky barrier exists at the LSMO/BTO interface, which dominates the leakage current transport properties of LSMO/BTO bilayer films. Keywords. La 0.67 Sr 0.33 MnO 3 /BaTiO 3 films; leakage current transport mechanism; Schottky barrier.