No abstract

In this paper we consider an approach to increase integration rate of field-effect heterotransistors. Framework the approach we consider a heterostructure with specific configuration. After manufacturing the heterostructure we consider doping of required areas of the heterostructure by diffusion or ion implantation. The doping finished by optimized annealing of dopant and/or radiation defects. Framework this paper we consider a possibility to manufacture with several channels. Manufacturing multi-channel transistors gives us a possibility the to increase integration rate of transistors and to increase electrical current through the transistor.