The influence of the light intensity level, of illuminance depth and of temperature on some parameters of a silicon solar cell operating in the vicinity of the short-circuit has been the subject of our study.Starting from the continuity equation, then from the equation of the density of minority charge carriers where the effects were studied, we have analyzed the performance parameters according to a temperature range from and under an illumination from to Sun.The results indicate that the illumination intensity has a dominant effect on the current parameters.The photocurrent density and the short-circuit current increase with increasing light intensity level whereas the shunt resistance is more sensitive to temperature variations.

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The aim of the study is to compare the sheet resistance between silicon doped n and silicon doped p at dark and no apply voltage.The sheet resistance ρsq at equilibrium is determined from the net ionised doping concentration and the mobility of the majority carriers.The calculator then determines the sheet resistance and the junction depth of the surface diffusion at outdoor temperature..The sheet resistance of silicon with background doped boron has great sheet resistance compared to silicon with background doped phosphorus.

We propose, in this article, the study of the phenomena of energy storage in a wall in frequency dynamic mode. The optimal heat exchange coefficient and the maximum pulsation were determined from the temperature and flux density curves, respectively. An electric-thermal analogy made it possible to determine the phenomena of energy storage from Bode diagrams of thermal capacity and thermal inductance.

This article presents, on the one hand, the performance of ARC by configurations ITO/Si, MgO/Si, and GeO 2 /Si. On the other hand, we study the impact of thickness on the reflection of OCTs, because the thickness of OCTs plays an important role on the optical properties and the variation of the reflection and transmission of TCO/Si heterojunctions as a function of thickness is also sown. And the last part of the paper, we will make a comparative study between the performance of silicon textured on the front side and that of silicon where the front side is planar. These two forms of silicon will be covered with ARC. For this, we will use the following materials ITO, MgO, and GeO 2 and we represent the variation of the reflection of CAR on a planar surface and on a textured surface as a function of the wavelength. The results show that the reflection is low in textured surface compare to the planar surface.