No abstract

The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries 1

Few-layer graphene (FLG) has been predicted to exist in various crystallographic stacking sequences, which can strongly influence the electronic properties of FLG. We demonstrate an accurate and efficient method to characterize stacking order in FLG using the distinctive features of the Raman 2D-mode. Raman imaging allows us to visualize directly the spatial distribution of Bernal (ABA) and rhombohedral (ABC) stacking in tri- and tetra-layer graphene. We find that 15% of exfoliated graphene tri- and tetra-layers is comprised of micron-sized domains of rhombohedral stacking, rather than of usual Bernal stacking. These domains are stable and remain unchanged for temperatures exceeding $800^{\circ}$C.Comment: submitted to Nano Letters; supplementary information about infrared spectroscopy of ABA and ABC graphene trilayers are included