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Energies from ab initio electronic structure calculations, combined with empirically derived bond correction factors for Si-H and Si-Cl bonds, have been used to derive a consistent set of heats of formation for the complete set of SiH,, SiCI, ( n I 4), and SiH,Cl, ( n + m 5 4) species. The derived values are generally in agreement with literature values. However, some changes in currently accepted heats of formation are recommended.