Zhongyong thinking (Doctrine of the Mean) is a traditional Confucius interpersonal style with emphasis on interpersonal harmony and connection. In contemporary society, is Zhongyong thinking beneficial to, or has Zhongyong thinking become an old-fashioned idea with trivial or even detrimental influence on mental health? The current study explored the relationship of Zhongyong thinking and mental health measures in two studies. Study 1 was a cross-sectional survey involving a large representative sample of 8,178 Chinese undergraduate students. We found that Zhongyong thinking was negatively associated with anxiety ( r = −.23, p < .01) and depressive symptoms ( r = −.32, p < .01), but positively associated with self-esteem ( r = .28, p < .01). Compared with low-Zhongyong group, those who scored high on the Zhongyong Thinking Scale had substantially lower scores on anxiety and depressive symptoms, and had higher scores on self-esteem and life satisfaction. In Study 2, we experimentally intervened in Zhongyong thinking in 30 mildly depressed students, comparing mental health outcomes with a randomized control group ( n = 30) who received regular supportive group intervention. We found that training in Zhongyong thinking was more effective in alleviating depressive symptoms compared with the control group. The two studies prove from different aspects that Zhongyong thinking still plays an important role in regulating mental distress and maintaining subjective well-being among contemporary Chinese young adults. Why Zhongyong thinking is beneficial, and how to transmit this traditional cultural heritage to promote emotion regulation strategies are discussed.
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By photo-sensitizing the surface controlled negative impedance transistor(NEGIT), We can get a novel photo-negati ye resistance device-photo-surface controlled negative impedance trans istor-PN EGIT, PN EGIT has a photo-surface controlled negative res i stance I-V characteristics.By taking PNEGIT as an Optical input device to form a drive device and a resistor RL to form a load ofthe inverter.And taking a LED in series with RL as an optical output device. Due to the Instabilty at the state in the negative resistance region. A photo-controlled Bistability can be made. The state in the valley current region will jump suddenly to the state in the positive resistance region orjumps in the opposite direction as the optical input power Pin increases or decreases respectively.It is demonstrated that, There are two states of photo current or optical output power p0 corresponding one State of p,, Value. This optical Bistability has the function of optical switching, optical self-latching, and optical memory, It can be Applicated in the area of optical information processing, optical computing and optical communication in coming days.
By encapsulating a light emitting diode(LED) with a Silicon photo-negative resistance Device face to face in a hermetic package, a new type opto-isolator has been developed. Because of the features of Bistability and self-latching on the silicon photo-negative resistance devices, these non-linear opto-isolatores present the response persistence function for the input signal, In this paper, the demonstration of response persistence function on PDUBAT type of silicon photo-negative resistance device has been made experimentally. The Dual Base Transistor(DUBAT)1 is a three terminals Voltage controlled negative resistance device, It is composed from the combination of a pnp type lateral bipolar transistor and a npn type vertical bipolar transistor. As DUBAT is radiated by light, the npn bipolar transistor is taken as a phototransistor, Thus the DUBAT will become a photo-DUBAT or PDUBAT, In PDUBAT, It is found that the photo-controlled "5" negative resistance characteristic can introduce a photo-controlled current switching effect and the persistent response functions, which keeps the response state for the input light signal until the reset signal changes the circuit from maintaining state to waiting state.
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