No abstract

Heterostructures have a high potential for infrared radiation applications in the present scenario. The infrared (IR) region, particularly ranging from 760 nm to 1 million nm, is significant in a list of applications including communications, sensing, monitoring, and imaging. According to different applications, designs of nanoscale heterostructures vary. For this purpose, III-Sb element-based heterostructures are studied. We found a dramatic change toward longer luminous wavelengths while preserving high crystal quality with the addition of Sb to ternary and quaternary. The current study shows the compositional changes in the material caused by adding Sb. In order to boost the device's performance, several heterostructures have been designed. The optical characteristics of these heterostructures are also analyzed under various parameters such as pressure, temperature, and external electric field. For the computation of characteristics like optical gain, band structure, wave function, etc., the k·p method and Luttinger-Kohn model are employed. This review article reveals research on different heterostructure designs for IR applications. This work is the result of numerous types of research in the subject of optoelectronics.