In this paper, a high electron mobility transistor's (HEMT) analytical model, which is based on the vertical operation of Schottky barrier gate, has been modified for the I−V characteristics of rectangular shaped AlGaN/GaN FinFETs having three-sided Schottky barrier gate operation. The proposed model includes the effect of the tri-gate structure on sheet carrier concentration (n s ) of the device. A three dimensional Poisson equation is solved keeping in view, the device geometry and applied potentials, to get the effect of the side gates on n s . It is demonstrated that n s of a FinFET depletes relatively faster than its HEMT counterpart due to the extra fields caused by the side gates. Knowing bias dependent n s , FinFET I−V expressions are developed and tested on AlGaN/GaN FinFETs of varying gate lengths (L g =0.4 -1.0 μm) for the above threshold regime. A good agreement between the experimental and modeled characteristics is observed, which demonstrates the validity of the proposed model in predicting the DC characteristics of tri-gate AlGaN/GaN FinFETs.

This article presents a Schrödinger–Poisson based technique to predict I−V characteristics of trigate Si fin field effect transistors (FinFETs). The channel characteristics are modeled by a three‐dimensional (3D) Schrödinger wave equation considering quantum‐mechanical ballistic transport. Using a nonequilibrium green function and a 3D Poisson equation, drain current associated with source‐drain Fermi energy difference is evaluated. Contact resistance and its impact on the drain current is adjusted using a modeled parameter in Fermi‐Dirac distribution function. It is observed that the drain current as a function of drain bias saturates because of the finite carrier supply from the source electrode. The model is calibrated using TCAD simulations for quantum transport. To validate the proposed model, output and transfer characteristics of nanoscale FinFETs are compared with experimental data and a good degree of accuracy is observed. It has been demonstrated that the proposed model has the ability to predict FinFETs characteristics having Tfin=3−350.24emnm.

This paper presents a comprehensive I − V model for the evaluation of above threshold DC characteristics of trigate AlGaN/GaN FinFETs for both depletion and inversion mode of operations. For the depletion mode, 2DEG carrier concentration, n s , is evaluated considering the trigate geometry of the device, which is then used to assess drain current (I 2D ) for both the linear as well as the saturation region of operations. At a relatively higher gate bias, where the 2DEG is fully un-depleted, a significant rise in the drain current is observed which is associated with the creation of two additional side channels in the GaN layer of AlGaN/GaN FinFET, caused by the inversion of carriers. This component of the drain current, referred to as inversion current (I inv ), is modeled using the solution of a 2D Poisson equation. The total current (I ds ) is the summation of both the depletion as well as the inversion currents (I ds = I inv + I 2D ). The developed technique is validated using experimental data and is seen to exhibit a good degree of accuracy. Therefore, the proposed model could serve as a useful tool to predict AlGaN/GaN FinFETs output and transfer characteristics.