A high current amplification factor and a high output current density in p-type operation were achieved in vertical-type metal-base organic transistors (MBOTs) with a simple layered-device structure using a common material of pentacene. Key fabrication steps enabling stable and reproducible current amplification included heat treatment following the base electrode deposition and an optimized collector layer thickness. In addition, LiF layers above and below the base electrode enhanced the device performance so as to achieve a large current modulation of 24.9 mA cm-2 and a current amplification factor of 567 at a collector voltage VC=-10 V and base voltage VB=-3 V.

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