R. Amos scite author profile

Articles you may be interested inAn accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulatorsemiconductor capacitors with SiO2/GeO2 bilayer passivation Erratum: "A method for measuring barrier heights, metal work functions and fixed charge densities in metal/ SiO 2 /Si capacitors"[Appl.Electrical and thermal transient during dielectric breakdown of thin oxides in metal-SiO 2 -silicon capacitors

show abstract

Design of high performance PFETs with strained si channel and laser anneal

Luo

Chong

Kim

et al.

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

R. Amos

Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation

Advanced gate stacks with fully silicided (FUSI) gates and high-k dielectrics. enhanced performance at reduced gate leakage

Preparation and properties of in-situ YBaCuO films on Si substrates with buffer layers

A method for measuring barrier heights, metal work functions and fixed charge densities in metal/SiO2/Si capacitors

Design of high performance PFETs with strained si channel and laser anneal

Contact Info

Product

Resources

About