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Quantum transport in high mobility modulation doped Ga 0.25 In 0.75 As/InP quantum wells

Molecular beam epitaxy was employed for the growth of HgCdTe-based n-p + -n device structures on (211)B oriented CdZnTe substrates. The device structures were processed as mesa isolated diodes, and operated as back-to-back diodes for the simultaneous detection of two closely spaced sub-bands in the mid-wave infrared spectrum. The devices were characterized by R 0 A values in excess of 5 × 10 5 Ω cm 2 at 78K, at f/2 fov and quantum efficiencies greater than 70% in each band. Infrared imagery from a focal plane array with 128 × 128 pixels was acquired simultaneously from each band at temperatures between 77 to 180K, with no observable degradation in the image quality with increase in temperature.

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