PACS 61.50. Ks, 61.72.Ff, 68.35.bg The deposition of Al film onto the (111) surface of a p-Si crystal was shown to induce a deformation in the near-surface layer of the latter. Provided that the crystal strain is elastic and uniaxial, the gettering of defects in the near-surface layer is observed, which is confirmed by a change in the dependence of the specimen resistance on the elastic strain magnitude. The maximum depth of the defect capture has been calculated on the basis of the energy of interaction between the deformed layer and dislocations. K e y w o r d s: uniaxial elastic strain, crystal lattice, heterostructure, epitaxial growth, gettering, Cottrell atmosphere.
The effects of heat treatment and light on the conversion of Finto X-centres have been investigated in specially treated NaCl crystals with hydroxyl impurities. The mechanism of the stimulating action of the impurity in the F -+ X conversion is analysed. The results of the work are treated from a viewpoint of a new model of X-centres, according to which these centres are "quasicolloidal" formations, occurring a t the initial stage of F-centre coagulation. Suggestions are presented about the mechanism of a direct formation of quasicolloidal centres (X-centres) in crystals under high-dose y-irradiation.I n speziell behandelten NaC1-Kristallen mit Hydroxyldefekten wurde der EinfluD einer Temperung und Belichtung auf die Konversion von Fin X-Zentren untersucht. Der Stimulierungsmechanismus des Defekts auf die F -+ X-Konversion wird analysiert. Die Ergebnisse der Arbeit werden vom Standpunkt eines neuenModells fiir X-Zentren behandelt, wonach diese Zentren ,,quasi-kolloidale" Gebilde darstellen, die im Anfangszustand der F-Zentren-Koagulation auftreten. Fiir den Mechanismus einer direkten Bildung quasikolloidaler Zentren (X-Zentren) in Kristallen unter y-Bestrahlung hoher Dosis werden Vorschliige gemacht.
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