Conversion efficiencies as high as 20% of AM1 have been obtained for single-crystal GaAs shallow-homojunction solar cells without Ga1−xAlxAs layers. These cells, which are fabricated by a simplified technique that does not require any vacuum processing steps, utilize an n+/p/p+ structure with an antireflection coating prepared by anodic oxidation of the n+ layer.

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An ArF excimer laser has been used to form p-n junctions in Si. The laser produces dopant molecules by gas-phase photolysis of an organometallic molecule and simultaneously heats the substrate to allow incorporation of the dopant. Solar cells having conversion efficiencies of 9.6% at AM1 without the use of antireflection coatings have been fabricated from these junctions.