Mid-infrared (3-5 pm) lasers and LEDs are Wig developed for use in chemical sensor systems. As-rich, InAsSb heterostructures display unique electronic properties that are beneficial to the performance of these midwave infrared emitters. The metal-organic chemical vapor deposition (MOCVD) growth of AIAs,,Sb, cladding layers and InAsSb/InAsP superlattice active regions are described. A regrowth technique has been used to fabricate gain-guided, injection lasers using undoped @-type) AIAso.,,Sbo, for optical confinement In device studies, we demonstrate lasers and LEDs utilizing the semi-metal properties of a p-GaAsSb/n-InAs heterojunction as a source for injection of electrons into the active region of emitters. This avoids the difficulties associated with n-type doping of AlAsSb cladding layers required for conventional p-n junction lasers and also provides a means for construction of active regions with multiple gain stages. Gain guided injected lasers employing a strained InAsSb/InAs multiquantum well active region operated up to 210 K in pulsed mode, with an emission wavelength of 3.8-3.9 p. A characteristic temperature of 40 K was observed to 140 K and 29 K from 140 K to 210 K. An optically pumped laser with an InAsSb/InAsP superlattice active region is also described. The maximum operating temperature of this 3.7 pm laser was 240 K.
Gläser und Glaskeramiken (β‐Eukryptit) mit Zusammensetzungen nahe der von stöchiometrischem L120°C A1203°C 2 SiO2, z.B. LiAlSiO4 , sind, wie aus Messungen der Ionenleitfähigkeit (25‐650°C) hervorgeht, bei hohen Temperaturen gute Litleitende Festelektrolyte (bei N 600°C etwa l0" (ohm′ cm)" ).
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