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A single-stage 5-100 GHz InP MMIC amplifier with an average gain of more than 5.5 dB has been developed. This MMIC distributed amplifier has the highest frequency and bandwidth of operation (5-100 GHz) reported to date for wide-band amplifiers. The average associated (not optimized) noise figure of the MMIC amplifier was approximately 5.8 dB measured over 4-40 GHz. The active devices in this seven-section distributed amplifier were 0.1 p m mushroom gate, InGaAs-InAIAs lattice-matched HEMT's on a semi-insulating InP substrate. Coplanar waveguide was the transmission medium for this 100 GHz MMIC with an overall chip dimension of 500 pm by 860 pm.

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