Chemical methods for synthesizing metal chalcogenides are currently receiving wide attention because of their simplicity, cost effectiveness and suitability for large scale deposition. Thin films can be deposited on variety of substrate such as insulators, semiconductor or metal because of lower temperature associated with these methods reduces chances of oxidation and corrosion of substrate. Slow release of anions in these processes facilitates better crystallinity with improved grain structure. Depending upon bath parameter, film deposition can take place by ion-ion mechanism of materials on the substrate or adsorption of hydroxide intermediate on substrate. Using these methods, thin films of group II-VI, III-VI, V-VI etc. have been deposited. Photo-sensor, photocells, detectors, photoluminescence, photovoltaic materials, thermo-electric materials, pigments, anti-reflective coating, optical memories, crude petroleum processing etc. are some of the application of metal chalcogenide films. In the present review article, we have described brief theoretical background necessary for chemical deposition. We discussed CBD method in details to obtain well-adherent and uniform thin film of ZnS. Their bath parameter, structural, morphological, optical, electrical properties etc. are also described.

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