CdTe/CdS solar cells were fabricated by depositing CdTe films on glass/SnO,/CdS substrates by MOCVD in different growth ambients with varying Te/Cd mole ratio in the range of 0.02 to 15. Short circuit current density (JJ showed a minimum at Te/Cd ratio of 0.1 and increased on both sides of this minimum iving rise to a "U" shaped curve. Open circuit voltage T V,) was highest for the Te-rich growth ambient and was low for the stoichiometric and the Cd-rich growth conditions. Such variation in J, and V, gave the best cell efficiency of 12% in this study at a Te/Cd ratio of SIX. The films own under Te-rich conditions form ptype CdTe, but tfe Cd-rich growth conditions produce ntype CdTe which require 40O0C/air anneal for the type conversion. Detailed measurements and analysis revealed a high degree of atomic interdiffusion at the interface when the CdTe films were grown in the Te-rich conditions. The enhanced interdiffusion reduces interface states which is further supported by higher effective lifetime in the Te-rich films, as well as rapid decrease in QE under forward bias for the Cd-rich cells.

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Codes are usedfor pricingali publications. The code is determinedby the numberof pages in the publication.Informationpertainingto the pricingcodes can be found in the current issue of the followingpublicationswhich are generally available in most libraries:Energy Research Abstracts (ERA); Government Reports Announcements and Index (GRA and I); Scientific and TechnicalAbstrect Reports (STAR)

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