Reflection x-ray topography has been used to show that incoherent radiation annealing of complete 2-in.-diam GaAs wafers results in extensive crystallographic slip networks. These slip lines are believed to be due to small temperature nonuniformities induced during the anneal by both edge radiation and thermal mass effects. The use of a series of annular guard rings around the wafer during the anneal is shown to reduce both the severity and the number of slip lines.

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Dual implants of (P+ + Si+) through thin Si3N4, layers have been studied. The phosphorus dose has a marked effect on the electrical properties of 6 × 1012 Si+ cm−2. Optimum electrical activation occurred at a phosphorus dose well below that required to produce an amorphous layer and depended on whether a furnace or a rapid thermal anneal was performed. Good control over the tail of the electron concentration profile was obtained for doses of phosphorus in the range 6 × 1012 to 1 × 1014 ions cm−2.