Interfacial charge-transfer (ICT) transitions involved in charge-separation mechanisms are expected to enable efficient photovoltaic conversions through one-step charge-separation processes. With this in mind, the charge-transfer complex fabricated from TiO2 nanoparticles and 7,7,8,8-tetracyanoquinodimethane (TCNQ) has been applied to dye-sensitized solar cells. However, rapid carrier recombination from the conduction band of TiO2 to the highest occupied molecular orbital (HOMO) of TCNQ remains a major issue for this complex. In this study, to inhibit surface-complex recombinations, we prepared Nb-doped TiO2 nanoparticles with different atomic ratios for enhanced electron transport. To investigate the effects of doping on electron injection through ICT transitions, these materials were examined as photoelectrodes. When TiO2 was doped with 1.5 mol % Nb, the Fermi level of the TiO2 electrode shifted toward the conduction band minimum, which improved electron back-contact toward the HOMO of TCNQ. The enhancement in electron transport led to increases in both short circuit current and open circuit voltage, resulting in a slight (1.1% to 1.3%) improvement in photovoltaic conversion efficiency compared to undoped TiO2. Such control of electron transport within the photoelectrode is attributed to improvements in electron injection through ICT transitions.

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