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The growth of quantum wires within a 'V' groove etched in a substrate is a recognized method of fabricating an active region confined in two dimensions for use in optoelectronic devices. We have approximated the 'crescent shaped' wire obtained using such a process by a rectangular cross section and have calculated the absorption and photoluminescence spectra of such a structure. We h a y used a GaAs-AI,,,,Ga,,6,As quantum wire of typical dimensions 100 x (15b250) A for our calculations and have included dimensional fluctuations. By varying the size of the largest confinement direction between 150 and 250 A, we have determined that

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