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The high degree of spin-polarization observed in ordered double perovskite oxide Sr 2 FeMoO 6 at room temperature has attracted considerable interest from both fundamental and practical points of view. In this paper, we have shown a significant change in spin-polarization with a small B-site offstoichiometry. We have demonstrated a direct correlation between the growth process, Fe:Mo (B-site) stoichiometry, and the electrical properties of half metallic Sr 2 FeMoO 6 thin film. We have shown that varying the Fe:Mo (B-site) stoichiometry by a small atomic percent results in an order of magnitude change in resistivity and at least four times change in magnetoresistance. Theoretical calculation suggests a strong correlation between electronic structure, electronic polarization, and B-site non-stoichiometry.

Electrostatic gating and light illumination are two widely used stimuli for semiconductor devices. Two-dimensional electron gas (2DEG) at oxide heterostructures has shown potential in optoelectronics due to its high optical response and gate tuning property. The appearance of high photoconductivity and persistent photoconductivity at the oxide heterostructure of two insulators LaFeO 3 and SrTiO 3 is shown here. The photoconductivity has been further tuned using positive and negative back gating. A large change in conductivity has been achieved under the simultaneous application of light and electrostatic gating. A few measurement protocols that manifest possible applications of this interface as memory and switching devices are implemented.

Pulsed laser deposition (PLD) is one of the important techniques for the growth of oxide thin films, interfaces, and superlattices. It can also be utilized to implement diverse combinatorial approaches. Thin film growth using PLD hinges on various parameters that decide the composition, structure, quality, and finally the physical properties of the films, interfaces, and superlattices. In this paper it is demonstrated how the growth conditions inside the chamber during the growth can be judged from outside by combining in situ and ex situ techniques. An example of the growth of LaVO3‐SrTiO3 interface is given to elucidate the effect of repetitive growth on the chamber condition and hence on the reproducibility of the physical properties of the samples. The experiments suggest noticeable change in transport properties with successive deposition processes.

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