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We have extended the capabilities of the commercial device simulator ATLAS with extra models specific to the simulation of LED devices. This simulator was used to simulate the characteristics of a GaN/InGaN micro-ring light-emitting diode. These results include spectral response and output coupling efficiency.

The need for adequate simulations of quantum transport in semiconductor heterostructures has become more and more important as new advances in processing techniques have permitted the fabrication of devices that are expected to be controlled by quantum phenomena. Here we use a model based on the quantum moment equations derived from the Wigner distribution function to simulate a double barrier structure in two dimensions. The expected negative resistance effect is clearly seen in the current vs voltage characteristics of the device at 300 K. Other information, such as the electron concentration, can also be obtained with this method.