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Progress-to-date of a S-Ku band intelligent amplifier microsystem is presented. Performance objectives are 0.5 Watt with 30%-55% power added efficiency across the band using a total of 10 RF MEMS. GaAs-to-GaAs and Borosilicateto-GaAs low temperature (<250C) indium-gold wafer bonding is employed to provide hermeticity and integration of the pHEMT transistor with the RF MEMS. The compact mixed signal microsystem, 2 inches by 3 inches, utilizes an existing data processor with an intelligent control algorithm which optimizes the input and output circuit matching networks for optimal performance.